c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . wf wf wf wf f20n60s f20n60s f20n60s f20n60s rev.a ap r .201 2 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 20 a, 6 00v,r ds(on) (max 0.20 ? )@v gs =10v ? ultra-low gate charge(typical 84.4 nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi's advancedplanar stripe,vdmos technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .this devices is specially wellsuited for ac-dc switching power supplies, dc-dc powerconverters high voltage h-bridge motor drive pwm . absolute maximum ratings symbol parameter value units v dss drain source voltage 600 v i d continuous drain current(@tc=25 ) 20 a i dm drain current pulsed duration is limited by t jmax .) 50 a v gs gate to source voltage 2 0 v e as single pulse avalanche energy 800 mj i ar single pulse avalanche current 20 a e a r repetitive avalanche energy (frequency is limited by t jmax .) 1 mj p d total power dissipation(@tc=25 ) 34.5 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 3.6 /w r qj a thermal resistance , junction -to - ambient - - 60 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f20 f20 f20 f20 n n n n 60s 60s 60s 60s 2 / 5 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 600 v,v gs =0v - - 1 a v ds =600v,t j =150 - - 100 a drain -source breakdown voltage v (br)dss i d = 250 a ,v gs =0v 600 - - v gate threshold voltage v gs(th) v ds =v gs , i d = 250u a 2.5 - 3.5 v drain -source on resistance r ds(on) v gs =10v,i d = 13.1 a - 0.16 0.20 ? forward transconductance gfs v ds 30 v,i d = 20 a - 1 8.8 - s input capacitance c iss v ds = 70 v, v gs =0v, f=1mhz - 2140 pf reverse transfer capacitance c rss - 18 output capacitance c oss - 300 total gate charge(gate-source plus gate-drain) qg v d s = 480 v, v gs =10v, i d = 20.7 a - 84.4 - nc gate-source charge qgs - 9.1 - gate-drain("miller") charge qgd - 14.6 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i s t c =25 - - 20 a pulse diode forward current i sm 60 body d iode v oltage v dsf t j =25 i sd = 20 a,v gs =0v - 0.96 1.2 v
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f20 f20 f20 f20 n n n n 60s 60s 60s 60s 3 / 5 fig.1 output characteristics fig.2 transfer characteristics fig.3 on-resistance variation vs drain current fig.4 capacitance fig. 6 source-drain diode forward voltage fig. 5 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f20 f20 f20 f20 n n n n 60s 60s 60s 60s 4 / 5 fig. 7 on-resistance vs. junction temperature fig. 8 threshold voltage vs.junction temperature
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f20 f20 f20 f20 n n n n 60s 60s 60s 60s 5 / 5 to- to- to- to- 220 220 220 220 f f f f package package package package dimension dimension dimension dimension unit:mm
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